0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 kta 1504 features collect or pow er diss ipation: p c =150mw collect or curr ent: i c =-150ma absolute maxim um ratings t a = 25 paramet er sym bol rating unit collector-em itt er voltage v ceo -50 v collector-base volt age v cbo -50 v em itt er-base voltage v ebo -5 v collector curr ent i c -150 m a collector pow er dissipati on p c 150 m w junct ion tem pera ture t j 150 storage tem pera ture rang e t stg -55 to 150 ele ctric al characteristics t a = 2 5 paramet er sym bol test conditions min typ ma x unit collector-ba se breakdow n voltage v (br)cbo i c =-10 0a, i e =0 -50 collector-emit ter breakdow n voltage v (br)ceo i c =-1ma ,i b =0 -50 em itt er- base brea kdow n voltage v (br)ebo i e =-10 0a, i c =0 -5 collector cut-off curre nt i cbo v cb =-50 v, i e =0 -0.1 a em itt er cut-o ff cur rent i ebo v eb =-5v, i c =0 -0.1 a dc cu rre nt gain h fe v ce =-6v, i c =-2ma 70 400 collector-em itt er saturation voltage v ce(sat) i c =-10 0m a, i b =-10 m a -0.1 -0.3 v transition frequen cy f t v ce =-10 v, i c =-1ma 80 mh z collector output capacitance c ob v cb =-10 v, i e =0, f=1mhz 4.0 7.0 pf noise figure nf v ce =-6v, i c =-0.1ma ,f=1k hz , r g =10k 1.0 10 db v v v h fe classif ication ma rking aso asy asg rank o y gr h fe 70 140 120 240 200 400 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type diodes smd type transistors smd type ic transistors smd type smd type ic transistors smd type smd type ic transistors smd type smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors smd type transistors transistors smd type s m d ty p e t r a n s i s t o r smd t ype t product specification 4008-318-123
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